| PART |
Description |
Maker |
| MA44641A MA44641B MA44641C MA44768 MA44622A MA4476 |
30 V, surfate mount step recovery diode
Step Recovery Diodes
|
MA-Com
MACOM[Tyco Electronics]
|
| MA44700V6 |
Surface Mount Low Power Step Recovery Diodes
|
M/A-COM Technology Solutions, Inc.
|
| 5082-0810 50820810 |
SILICON STEP RECOVERY DIODE S BAND, SILICON, STEP RECOVERY DIODE
From old datasheet system
|
Advanced Semiconductor, Inc.
ASI[Advanced Semiconductor]
|
| 50PF40 52PF40 50PFR40W 52PFR40W 50PFR80 52PFR80 52 |
Standard Recovery Diodes, Generation 2 DO-5 (Stud Version), 50 A
|
Vishay Siliconix
|
| SY10EL34 SY10EL34LZC SY10EL34LZCTR SY10EL34ZC SY10 |
5V/3.3V ÷2,÷4,÷8 Clock Generation Chip(5V/3.3V ÷2,÷4,÷8时钟发生芯片) 5V/3.3V ÷ 2，4，8时钟发生器芯片（5V/3.3V ÷ 2，4，8时钟发生芯片
LED 2MM QUAD YELLOW 10EL SERIES, LOW SKEW CLOCK DRIVER, 3 TRUE OUTPUT(S), 0 INVERTED OUTPUT(S), PDSO16
5V/3.3V /2 /4 /8 CLOCK GENERATION CHIP
5V/3.3V ±2, ±4, ±8 CLOCK GENERATION CHIP
5V/3.3V 2, 4, 8 CLOCK GENERATION CHIP
5V/3.3V ÷2, ÷4, ÷8 CLOCK GENERATION CHIP
|
Micrel Semiconductor, Inc.
MICREL[Micrel Semiconductor]
|
| APT33GF120B2RD APT33GF120LRD |
Fast IGBT & FRED 1200V 52A
The Fast IGBT is a new generation of high voltage power IGBTs.
The Fast IGBT⑩ is a new generation of high voltage power IGBTs.
The Fast IGBTis a new generation of high voltage power IGBTs.
|
Advanced Power Technology Ltd.
|
| IKW15N120T2 |
IGBT in 2nd generation TrenchStop? technology with soft, fast recovery anti-parallel Emitter Controlled Diode
|
Infineon Technologies A...
|
| VSC8113QB |
ATM/SONET/SDH 622 Mb/s Transceiver Mux/Demux with Integrated Clock Generation and Clock Recovery
|
ETC
|
| VSC8117 VSC8117QP VSC8117QP1 VSC8117QP2 |
ATM/SONET/SDH 622/155 Mb/s Transceiver Mux/Demux with Integrated Clock Generation and Clock Recovery
|
Vitesse Semiconductor Corporation
ETC
|
| APT10045B2FLL APT10045LFLL |
MGrid IDT Rec W/SglLRmp .76AuLF 10Ckt
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS.
POWER MOS 7 1000V 23A 0.450 Ohm
|
Advanced Power Technology Ltd.
|
| DVB4376-99 |
SILICON STEP RECOVERY DIODE
|
Advanced Semiconductor, Inc.
|
